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Optimizing Slow-Start Circuit for P-MOSFET to Prevent Overloading

The designer is struggling with a slow-start sub-circuit based on a P-MOSFET, which is experiencing high power loss during the ramp-up phase, peaking at 48W. The goal is to dimension the circuit to prevent overloading the FET and to determine if the chosen MOSFET can handle the stress.

Engineering, Core Engineering, Electrical Engineering